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Infineon IMW65R010M2HXKSA1 product image
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Infineon IMW65R010M2HXKSA1RoHS

Manufacturer
MPN
IMW65R010M2HXKSA1
LCSC Part #
C42670746
Packaging
TO-247-3
Customer #
Key Attributes
SiC MOSFET 650V G2
Datasheetpdf iconInfineon IMW65R010M2HXKSA1
In-Stock: 5
5 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 20.9692$ 20.97
30+$ 19.8852$ 596.56
Standard Packaging30/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingTO-247-3
Drain to Source Voltage650V
Current - Continuous Drain(Id)130A
Output Capacitance(Coss)386pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))5.6V
Pd - Power Dissipation440W
Reverse Transfer Capacitance (Crss@Vds)22pF
RDS(on)13.1mΩ
Number1 N-channel
Input Capacitance(Ciss)4.001nF
Gate Charge(Qg)112nC
TypeN-Channel

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging30
Sales UnitPiece

Introduction

AI Translation

Built on Infineon's robust 2nd generation Silicon Carbide trench technology, the 650 V CoolSiC™ MOSFET delivers unparalleled performance, superior reliability, and great ease of use. It enables cost effective, highly efficient, and simplified designs to fulfill the ever- growing system and market needs.

Features

AI Translation
  • Ultra-low switching losses
  • Benchmark gate threshold voltage, VGS(th) = 4.5 V
  • Robust against parasitic turn-on even with 0 V turn-off gate voltage
  • Flexible driving voltage and compatible with bipolar driving scheme
  • Robust body diode operation under hard commutation events
  • XT interconnection technology for best-in-class thermal performance

Applications

AI Translation
  • SMPS
  • Solar PV inverters
  • Energy storage and battery formation
  • UPS
  • EV charging infrastructure
  • Motor drives