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Infineon IMBG65R033M2HRoHS

Manufacturer
MPN
IMBG65R033M2H
LCSC Part #
C42670690
Packaging
TO-263-7
Customer #
Key Attributes
SICFET 650V 58A TO-263-7
Datasheetpdf iconInfineon IMBG65R033M2H
In-Stock: 3
3 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 12.0747$ 12.07
10+$ 11.479$ 114.79
30+$ 10.4455$ 313.37
100+$ 9.5439$ 954.39
Standard Packaging1000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingTO-263-7
ConfigurationHalf-Bridge
Drain to Source Voltage650V
Output Capacitance(Coss)117pF
Current - Continuous Drain(Id)58A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))5.6V
Pd - Power Dissipation227W
RDS(on)41mΩ
Reverse Transfer Capacitance (Crss@Vds)7pF
Number1 N-channel
Input Capacitance(Ciss)1.214nF
Gate Charge(Qg)34nC
TypeN-Channel

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging1000
Sales UnitPiece

Introduction

AI Translation

Built on Infineon’s robust 2nd generation Silicon Carbide trench technology, the 650 V CoolSiC™ MOSFET delivers unparalleled performance, superior reliability, and great ease of use. It enables cost effective, highly efficient, and simplified designs to fulfill the ever‑growing system and market needs.

Features

AI Translation
  • Ultra‑low switching losses
  • Benchmark gate threshold voltage, VGS(th)=4.5 V
  • Robust against parasitic turn‑on even with 0 V turn‑off gate voltage
  • Flexible driving voltage and compatible with bipolar driving scheme
  • Robust body diode operation under hard commutation events
  • .XT interconnection technology for best‑in‑class thermal performance

Applications

AI Translation
  • SMPS
  • Solar PV inverters
  • Energy storage and battery formation
  • UPS
  • EV charging infrastructure
  • Motor drives