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Infineon IGT65R035D2ATMA1RoHS

Manufacturer
MPN
IGT65R035D2ATMA1
LCSC Part #
C42669718
Packaging
PG-HSOF-8
Customer #
Key Attributes
650V 49A 1.2V 167W 35mΩ 1 N-channel N-Channel PG-HSOF-8 Single FETs, MOSFETs RoHS
Datasheetpdf iconInfineon IGT65R035D2ATMA1
In-Stock: 5
5 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 15.7505$ 15.75
10+$ 15.0476$ 150.48
30+$ 13.8293$ 414.88
100+$ 12.7662$ 1276.62
Standard Packaging2000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingPG-HSOF-8
Drain to Source Voltage650V
Current - Continuous Drain(Id)49A
Output Capacitance(Coss)91pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation167W
TechnologyE-mode
RDS(on)35mΩ
Reverse Transfer Capacitance (Crss@Vds)1.3pF
Number1 N-channel
Input Capacitance(Ciss)540pF
Gate Charge(Qg)7.7nC
TypeN-Channel

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2000
Sales UnitPiece

Introduction

AI Translation

Infineon's CoolGaN™ is a high-efficiency GaN transistor designed for 650V power conversion. It enables higher power density, supports reduced system BOM cost, and helps achieve compact form factors. Manufactured using 200mm wafer technology on a fully automated production line with tight production tolerances and the highest product quality, it is suitable for a wide range of applications from consumer electronics to industrial use.

Features

AI Translation
  • Enhancement-mode transistor
  • Ultra-fast switching speed
  • Zero reverse recovery charge
  • Reverse conduction capable
  • Low gate and output charge
  • Excellent commutation robustness
  • 2 kV HBM ESD compliant

Applications

AI Translation
  • Industrial applications
  • Telecom equipment
  • Data center switching power supplies
  • Chargers and adapters