LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
Cart
Infineon FP200R12N3T7 product image
  • FP200R12N3T7 thumbnail 1
  • FP200R12N3T7 thumbnail 2
  • FP200R12N3T7 thumbnail 3
  • Pinout
  • Footprint
Images for reference only

Infineon FP200R12N3T7RoHS

Manufacturer
Infineon
MPN
FP200R12N3T7
LCSC Part #
C42547889
Packaging
Through Hole,122x62.5mm
Customer #
Key Attributes
IGBT 1.2kV 200A TH
Datasheetpdf iconInfineon FP200R12N3T7
In-Stock: 10
10 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 117.5798$ 117.58
30+$ 111.7525$ 3352.58
Standard Packaging10/Full Box
Better price for more quantity?
$

Products Specifications

Show similar products (0) >
TypeDescription
CategoryDiscrete Semiconductors/Transistors/IGBTs/IGBT Modules
ManufacturerInfineon
PackagingThrough Hole,122x62.5mm
Pd - Power Dissipation-
Td(off)351ns
Td(on)203ns
Current - Collector(Ic)200A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)140pF
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5.15V@4.6mA
Gate Charge(Qg)3.34uC@600V
Operating Temperature-40℃~+175℃
Vce Saturation(VCE(sat))1.8V@200A,15V
Reverse Recovery Time(trr)-
Switching Energy(Eoff)12.9mJ
Turn-On Energy (Eon)25.1mJ
Input Capacitance(Cies)40.3nF
Output Capacitance(Coes)-
Report an ErrorShow similar products (0) >

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging10
Sales UnitPiece

Features

AI Translation
  • Electrical characteristics: collector-emitter voltage V_CES = 1200V, rated collector current I_Cnom = 200A / repetitive peak collector current I_CRM = 400A
  • Mechanical characteristics: integrated NTC temperature sensor
  • Mechanical characteristics: soldering technology
  • Mechanical characteristics: copper baseplate
  • Mechanical characteristics: low thermal resistance Al₂O₃ substrate