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XNRUSEMI XR30G15D product image
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XNRUSEMI XR30G15DRoHS

Manufacturer
XNRUSEMIAsian Brands
MPN
XR30G15D
LCSC Part #
C42457188
Packaging
PDFN3333-8L
Customer #
Key Attributes
MOSFET N-CH+P-CH ARR 30V 15A PDFN3333-8L
Datasheetpdf iconXNRUSEMI XR30G15D
In-Stock: 4,810
4,810 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
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QtyUnit PriceTotal Amount
5+$ 0.0765$ 0.38
50+$ 0.0671$ 3.36
150+$ 0.0623$ 9.35
500+$ 0.0588$ 29.40
2,500+$ 0.056$ 140.00
5,000+$ 0.0545$ 272.50
Standard Packaging5000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerXNRUSEMI
PackagingPDFN3333-8L
ConfigurationHalf-Bridge
Drain to Source Voltage30V
Output Capacitance(Coss)54pF;70pF
Current - Continuous Drain(Id)15A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation2.5W
RDS(on)16mΩ@10V;33mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)40pF;56pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)370pF;530pF
Gate Charge(Qg)7.2nC@4.5V;6.8nC@10V
TypeN-Channel + P-Channel
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Introduction

AI Translation

XR30G15D is a high-performance trench N-channel and P-channel MOSFET with extremely high cell density, offering excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge for most synchronous buck converter applications. XR30G15D is RoHS compliant and meets green product requirements, with 100% guaranteed avalanche ruggedness and full functional reliability qualification.

Features

AI Translation
  • Advanced high cell density trench technology
  • Ultra-low gate charge
  • Excellent dV/dt immunity
  • 100% avalanche energy guaranteed
  • RoHS compliant green devices available

Applications

AI Translation
  • Power management in half-bridge and inverter circuits
  • DC-DC converters
  • Load switches