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XNRUSEMI XRS30V06D product image
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XNRUSEMI XRS30V06DRoHS

Manufacturer
XNRUSEMIAsian Brands
MPN
XRS30V06D
LCSC Part #
C42457041
Packaging
DFN-8L(3.3x3.3)
Customer #
Key Attributes
MOSFET N-CH 60V 30A DFN-8L(3.3x3.3)
Datasheetpdf iconXNRUSEMI XRS30V06D
In-Stock: 3,445
3,445 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1546$ 0.1469$ 0.73
50+$ 0.1348$ 0.1281$ 6.41
150+$ 0.1263$ 0.1200$ 18.00
500+$ 0.1157$ 0.1100$ 55.00
2,500+$ 0.1109$ 0.1054$ 263.50
5,000+$ 0.1081$ 0.1027$ 513.50
Standard Packaging5000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerXNRUSEMI
PackagingDFN-8L(3.3x3.3)
Drain to Source Voltage60V
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation60W
RDS(on)13mΩ@10V
Number2 N-Channel
Gate Charge(Qg)22nC@10V
TypeN-Channel
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Introduction

AI Translation

XR30P06 is a high cell density trench P-channel MOSFET offering excellent on-resistance (RDSON) and gate charge for most synchronous buck converter applications. XR30P06 is RoHS and green product compliant, 100% guaranteed avalanche-rated (EAS), and fully qualified for reliability.

Features

AI Translation
  • Split-gate trench MOSFET technology
  • Superior thermal dissipation package
  • High-density cell design for low R<sub>DS(ON)</sub>

Applications

AI Translation
  • DC-DC converter
  • Power management function
  • Synchronous rectification application