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XNRUSEMI XR65P02D product image
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XNRUSEMI XR65P02DRoHS

Manufacturer
XNRUSEMIAsian Brands
MPN
XR65P02D
LCSC Part #
C42456904
Packaging
PDFN-8L(3.3x3.3)
Customer #
Key Attributes
MOSFET P-CH 20V 65A PDFN-8L(3.3x3.3)
Datasheetpdf iconXNRUSEMI XR65P02D
In-Stock: 5,360
5,360 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1806$ 0.1716$ 0.86
50+$ 0.1462$ 0.1389$ 6.95
150+$ 0.1314$ 0.1249$ 18.74
500+$ 0.113$ 0.1074$ 53.70
2,500+$ 0.1048$ 0.0996$ 249.00
5,000+$ 0.0999$ 0.0950$ 475.00
Standard Packaging5000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerXNRUSEMI
PackagingPDFN-8L(3.3x3.3)
Configuration-
Drain to Source Voltage20V
Output Capacitance(Coss)885.6pF
Current - Continuous Drain(Id)65A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation41.6W
Reverse Transfer Capacitance (Crss@Vds)976pF
RDS(on)4.5mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)6.199nF
Gate Charge(Qg)-
TypeP-Channel
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Introduction

AI Translation

XR65P02D is a high cell density trench P-channel MOSFET, delivering excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge performance for most synchronous buck converter applications. XR65P02D complies with RoHS standards and green product requirements, and has passed full-function reliability qualification.

Features

AI Translation
  • Ultra-low gate charge
  • RoHS-compliant green devices available
  • Excellent CdV/dt immunity
  • Advanced high cell density trench technology