XNRUSEMI XR5N20
| Manufacturer | XNRUSEMIAsian Brands |
| MPN | XR5N20 |
| LCSC Part # | C42456880 |
| Packaging | TO-252-3L |
| Customer # | |
| Key Attributes | MOSFET N-CH 200V 5.5A TO-252-3L |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | XNRUSEMI | |
| Packaging | TO-252-3L | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 5.5A | |
| Output Capacitance(Coss) | 11.6pF | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 30W | |
| Reverse Transfer Capacitance (Crss@Vds) | 8.5pF | |
| RDS(on) | 450mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 461pF | |
| Gate Charge(Qg) | 11.4nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
XR5N20 is a high cell density trench N-channel MOSFET, offering excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge for most synchronous buck converter applications. XR5N20 is RoHS and green product compliant, with 100% guaranteed avalanche ruggedness (EAS), and has passed full functional reliability qualification.
Features
AI Translation
- RoHS-compliant green device
- Ultra-low gate charge
- Excellent Cdv/dt immunity
- Advanced high cell density trench technology
In-Stock: 130
130 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.1308$ 0.1243 | $ 0.62 |
| 50+ | $ 0.1042$ 0.0990 | $ 4.95 |
| 150+ | $ 0.0909$ 0.0864 | $ 12.96 |
| 500+ | $ 0.0809$ 0.0769 | $ 38.45 |
| 2,500+ | $ 0.0729$ 0.0693 | $ 173.25 |
| 5,000+ | $ 0.069$ 0.0656 | $ 328.00 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | XNRUSEMI | |
| Packaging | TO-252-3L | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 5.5A | |
| Output Capacitance(Coss) | 11.6pF | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 30W | |
| Reverse Transfer Capacitance (Crss@Vds) | 8.5pF | |
| RDS(on) | 450mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 461pF | |
| Gate Charge(Qg) | 11.4nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
XR5N20 is a high cell density trench N-channel MOSFET, offering excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge for most synchronous buck converter applications. XR5N20 is RoHS and green product compliant, with 100% guaranteed avalanche ruggedness (EAS), and has passed full functional reliability qualification.
Features
AI Translation
- RoHS-compliant green device
- Ultra-low gate charge
- Excellent Cdv/dt immunity
- Advanced high cell density trench technology
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



