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XNRUSEMI XR120N03D product image
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XNRUSEMI XR120N03DRoHS

Manufacturer
XNRUSEMIAsian Brands
MPN
XR120N03D
LCSC Part #
C42456735
Packaging
PDFN3333-8L
Customer #
Key Attributes
MOSFET N-CH 30V 120A PDFN3333-8L
Datasheetpdf iconXNRUSEMI XR120N03D
In-Stock: 4,640
4,640 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1383$ 0.1314$ 0.66
50+$ 0.1093$ 0.1039$ 5.20
150+$ 0.0948$ 0.0901$ 13.52
500+$ 0.084$ 0.0798$ 39.90
2,500+$ 0.0753$ 0.0716$ 179.00
5,000+$ 0.071$ 0.0675$ 337.50
Standard Packaging5000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerXNRUSEMI
PackagingPDFN3333-8L
Drain to Source Voltage30V
Output Capacitance(Coss)437pF
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation88W
RDS(on)3.1mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)396pF
Number1 N-channel
Input Capacitance(Ciss)4nF
Gate Charge(Qg)72nC@10V
TypeN-Channel
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Introduction

AI Translation

XR120N03D is a high cell density trench N-channel MOSFET that delivers excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge for most synchronous buck converter applications. XR120N03D complies with RoHS and green product requirements, is 100% guaranteed by avalanche energy (E<sub>AS</sub>) testing, and features full functional reliability qualification.

Features

AI Translation
  • Ultra-low gate charge
  • 100% avalanche energy (EAS) guaranteed
  • Green/RoHS-compliant devices available
  • Excellent CdV/dt immunity
  • Advanced high cell density trench technology