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XNRUSEMI XR100N03D product image
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XNRUSEMI XR100N03DRoHS

Manufacturer
XNRUSEMIAsian Brands
MPN
XR100N03D
LCSC Part #
C42456734
Packaging
PDFN3333-8L
Customer #
Key Attributes
MOSFET N-CH 30V 100A PDFN3333-8L
Datasheetpdf iconXNRUSEMI XR100N03D
In-Stock: 4,945
4,945 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1084$ 0.1030$ 0.52
50+$ 0.0857$ 0.0815$ 4.08
150+$ 0.0743$ 0.0706$ 10.59
500+$ 0.0658$ 0.0626$ 31.30
2,500+$ 0.059$ 0.0561$ 140.25
5,000+$ 0.0556$ 0.0529$ 264.50
Standard Packaging5000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerXNRUSEMI
PackagingPDFN3333-8L
Drain to Source Voltage30V
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation62.5W
Reverse Transfer Capacitance (Crss@Vds)282pF
RDS(on)4.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.1nF
Gate Charge(Qg)45nC@10V
TypeN-Channel
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Introduction

AI Translation

XR100N03D is a high cell density trench N-channel MOSFET, offering excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge for most synchronous buck converter applications. XR100N03D complies with RoHS and green product requirements, is 100% tested for avalanche energy capability (EAS), and carries comprehensive functional reliability certifications.

Features

AI Translation
  • Ultra-low gate charge
  • 100% avalanche energy (EAS) guaranteed
  • Green/RoHS-compliant devices available
  • Excellent CdV/dt immunity
  • Advanced high cell density trench technology