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XNRUSEMI XR3350MRoHS

Manufacturer
XNRUSEMIAsian Brands
MPN
XR3350M
LCSC Part #
C42456716
Packaging
DFN3030-8L
Customer #
Key Attributes
MOSFET N-CH ARR 20V 50A DFN3030-8L
Datasheetpdf iconXNRUSEMI XR3350M
In-Stock: 3,885
3,885 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.2095$ 0.1991$ 1.00
50+$ 0.1659$ 0.1577$ 7.89
150+$ 0.1473$ 0.1400$ 21.00
500+$ 0.124$ 0.1178$ 58.90
2,500+$ 0.1136$ 0.1080$ 270.00
5,000+$ 0.1074$ 0.1021$ 510.50
Standard Packaging5000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerXNRUSEMI
PackagingDFN3030-8L
Drain to Source Voltage20V
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))600mV
RDS(on)3.2mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)322pF
Number2 N-Channel
Input Capacitance(Ciss)2.61nF
Gate Charge(Qg)36nC@10V
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging5000
Sales UnitPiece

Introduction

AI Translation

These N-channel enhancement-mode power MOSFETs are fabricated using trench DMOS technology. This advanced technology is specifically designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are ideally suited for high-efficiency fast-switching applications.

Features

AI Translation
  • N-channel power MOSFET
  • Excellent on-resistance RDS(on)
  • Low gate charge
  • High power and current handling capability
  • Surface mount package
  • ESD rating: 2000V Human Body Model (HBM)

Applications

AI Translation
  • Motherboard / Graphics Card / Vcore
  • Load Switch
  • Handheld Instruments