GOODWORK AOD409-GK
| Manufacturer | GOODWORKAsian Brands |
| MPN | AOD409-GK |
| LCSC Part # | C42456340 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | MOSFET P-CH 60V 45A TO-252 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | GOODWORK | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 224pF | |
| Current - Continuous Drain(Id) | 45A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 52.1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 141pF | |
| RDS(on) | 23mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 3.635nF | |
| Gate Charge(Qg) | 25nC@4.5V | |
| Type | P-Channel |
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
The AOD409 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The AOD409 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. Super Low Gate Charge 100% EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology
Features
- Ultra-low gate charge
- 100% guaranteed avalanche capability
- Green/RoHS-compliant devices available
- Excellent dV/dt immunity
- Advanced high cell density trench technology
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.2467 | $ 1.23 |
| 50+ | $ 0.1959 | $ 9.80 |
| 150+ | $ 0.1741 | $ 26.12 |
| 500+ | $ 0.147 | $ 73.50 |
| 2,500+ | $ 0.1349 | $ 337.25 |
| 5,000+ | $ 0.1276 | $ 638.00 |
Standard Packaging2500/Full Reel | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | GOODWORK | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 224pF | |
| Current - Continuous Drain(Id) | 45A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 52.1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 141pF | |
| RDS(on) | 23mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 3.635nF | |
| Gate Charge(Qg) | 25nC@4.5V | |
| Type | P-Channel |
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
The AOD409 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The AOD409 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. Super Low Gate Charge 100% EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology
Features
- Ultra-low gate charge
- 100% guaranteed avalanche capability
- Green/RoHS-compliant devices available
- Excellent dV/dt immunity
- Advanced high cell density trench technology
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



