JSMSEMI ESD5341N

The ESD5341N is a unidirectional transient voltage suppression diode fabricated using advanced monolithic silicon technology, offering fast response time and low ESD clamping voltage, making it an ideal solution for protecting voltage-sensitive high-speed data lines. The device features ultra-low capacitance with a typical value of 0.5 pF and complies with the IEC 61000-4-2 ESD standard, supporting ±15 kV air discharge and ±8 kV contact discharge. It comes in an ultra-compact, lead-free 1.0×0.6×0.5 mm DFN package. Its small form factor, ultra-low capacitance, and high ESD surge protection capability make it an ideal choice for protecting mobile phones, digital video interfaces, and other high-speed applications.

• Ultra-compact package: 1.0 × 0.6 × 0.5 mm
• Ultra-low capacitance: 0.5 pF typical
• Ultra-low leakage current: nA level
• Low operating voltage: 5 V
• Low clamping voltage
• 2-pin leadless package
• Compliant with the following standards:
  • IEC 61000-4-2 ESD immunity test: air discharge ±20 kV; contact discharge ±15 kV
  • IEC 61000-4-5 surge test: 4.5 A (8/20 μs)
• RoHS compliant
• Lead finish: NiPdAu
• Package type: DFN1006-2

• Smartphones
• DisplayPort
• USB port
• Digital video interface
• PCI Express and serial SATA ports