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onsemi FQD2N90TMRoHS

Manufacturer
onsemi
MPN
FQD2N90TM
LCSC Part #
C424487
Packaging
TO-252AA
Customer #
Key Attributes
MOSFET N-CH 900V 1.7A TO-252AA
Datasheetpdf icononsemi FQD2N90TM
In-Stock: 4,938
4,938 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 0.7204$ 0.72
10+$ 0.5806$ 5.81
30+$ 0.5106$ 15.32
100+$ 0.4407$ 44.07
500+$ 0.3659$ 182.95
1,000+$ 0.3448$ 344.80
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingTO-252AA
Drain to Source Voltage900V
Current - Continuous Drain(Id)1.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)7pF
RDS(on)7.2Ω@10V
Number1 N-channel
Input Capacitance(Ciss)500pF
Gate Charge(Qg)15nC@720V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Features

AI Translation
  • 1.7 A, 900 V, RDS(on)=7.2 Ω (Max.) @ VGS = 10 V
  • ID = 0.85 A
  • Low Gate Charge (Typ. 12 nC)
  • Low Crss (Typ. 5.5 pF)
  • 100% Avalanche Tested
  • RoHS Compliant

Applications

AI Translation
  • switched mode power supplies
  • active power factor correction (PFC)
  • electronic lamp ballasts