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ElecSuper NTMFS5C670NLT1G(ES) product image
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ElecSuper NTMFS5C670NLT1G(ES)RoHS

Manufacturer
ElecSuperAsian Brands
MPN
NTMFS5C670NLT1G(ES)
LCSC Part #
C42434112
Packaging
PDFN5x6-8L
Customer #
Key Attributes
MOSFET N-CH 60V 80A PDFN5x6-8L
Datasheetpdf iconElecSuper NTMFS5C670NLT1G(ES)
In-Stock: 1,505
1,505 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.2594$ 1.30
50+$ 0.2322$ 11.61
150+$ 0.2205$ 33.08
500+$ 0.206$ 103.00
2,500+$ 0.1995$ 498.75
5,000+$ 0.1956$ 978.00
Standard Packaging5000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingPDFN5x6-8L
Output Capacitance(Coss)277pF
Pd - Power Dissipation65.7W
Configuration-
Drain to Source Voltage60V
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
RDS(on)4.6mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)245pF
Number1 N-channel
Input Capacitance(Ciss)4.765nF
Gate Charge(Qg)98nC@10V
Vgs-
TypeN-Channel
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Introduction

AI Translation

The NTMFS5C670NLT1G(ES) is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. Device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product NTMFS5C670NLT1G(ES) is Pb.-free.

Features

AI Translation
  • 60V, RDS(ON)=4.6mΩ(Typ.) @VGS=10V
  • Reliable and rugged
  • RDS(ON)=5.4mΩ(Typ.) @VGS=4.5V
  • Avalanche Rated
  • High density cell design for low RDS(on)
  • Low leakage current
  • Material: Halogen free

Applications

AI Translation
  • PWM applications
  • Load switch
  • Power management in portable/desktop PCs
  • DC/DC conversion