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ElecSuper SI2308A(ES) product image
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ElecSuper SI2308A(ES)RoHS

Manufacturer
ElecSuperAsian Brands
MPN
SI2308A(ES)
LCSC Part #
C42434101
Packaging
SOT-23
Customer #
Key Attributes
MOSFET N-CH 60V 3A SOT-23
Datasheetpdf iconElecSuper SI2308A(ES)
In-Stock: 2,240
2,240 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
20+$ 0.0315$ 0.63
200+$ 0.0245$ 4.90
600+$ 0.0207$ 12.42
3,000+$ 0.0183$ 54.90
9,000+$ 0.0163$ 146.70
21,000+$ 0.0153$ 321.30
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingSOT-23
Drain to Source Voltage60V
Output Capacitance(Coss)30pF
Current - Continuous Drain(Id)3A
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation1.5W
Reverse Transfer Capacitance (Crss@Vds)23pF
RDS(on)100mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)352pF
Gate Charge(Qg)9nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum20
Multiple20
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

The SI2308A(ES) is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. Device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product SI2308A(ES) is Pb-free.

Features

AI Translation
  • 60V, RDS(ON)=75mΩ(Typ.) @VGS=10V
  • Reliable and rugged
  • RDS(ON)=85mΩ(Typ.) @VGS=4.5V
  • Avalanche Rated
  • High density cell design for low RDS(on)
  • Low leakage current
  • Material: Halogen free

Applications

AI Translation
  • PWM applications
  • Power management in portable/desktop PCs
  • DC/DC conversion