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ElecSuper IRLR8726TRPBF(ES) product image
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ElecSuper IRLR8726TRPBF(ES)RoHS

Manufacturer
ElecSuperAsian Brands
MPN
IRLR8726TRPBF(ES)
LCSC Part #
C42434096
Packaging
TO-252
Customer #
Key Attributes
MOSFET N-CH 30V 68.6A TO-252
Datasheetpdf iconElecSuper IRLR8726TRPBF(ES)
In-Stock: 1,565
1,565 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1491$ 0.75
50+$ 0.1164$ 5.82
150+$ 0.1023$ 15.35
500+$ 0.0848$ 42.40
2,500+$ 0.077$ 192.50
5,000+$ 0.0723$ 361.50
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingTO-252
Drain to Source Voltage30V
Output Capacitance(Coss)217pF
Current - Continuous Drain(Id)68.6A
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation41.6W
Reverse Transfer Capacitance (Crss@Vds)183pF
Number1 N-channel
Input Capacitance(Ciss)1.916nF
Gate Charge(Qg)37nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

The IRLR8726TRPBF(ES) is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. Device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product IRLR8726TRPBF(ES) is Pb-free.

Features

AI Translation
  • 30V, RDS(ON)=4.0mΩ(TYP.) @VGS=10V
  • Reliable and rugged
  • RDS(ON)=7.1mΩ(TYP.) @VGS=4.5V
  • Avalanche Rated
  • High density cell design for low RDS(on)
  • Low leakage current
  • Material: Halogen free

Applications

AI Translation
  • PWM applications
  • Load switch
  • Power management in portable/desktop PCs
  • DC/DC conversion