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DOINGTER DOZ55N04RoHS

Manufacturer
DOINGTERAsian Brands
MPN
DOZ55N04
LCSC Part #
C42420928
Packaging
DFN3x3-8
Customer #
Key Attributes
MOSFET N-CH 40V 55A DFN3x3-8
Datasheetpdf iconDOINGTER DOZ55N04
In-Stock: 5,025
5,025 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1126$ 0.56
50+$ 0.088$ 4.40
150+$ 0.0756$ 11.34
500+$ 0.0664$ 33.20
2,500+$ 0.059$ 147.50
5,000+$ 0.0553$ 276.50
Standard Packaging5000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDOINGTER
PackagingDFN3x3-8
Drain to Source Voltage40V
Current - Continuous Drain(Id)55A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation28W
Reverse Transfer Capacitance (Crss@Vds)14pF
RDS(on)5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.03nF
Gate Charge(Qg)19.5nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging5000
Sales UnitPiece

Introduction

AI Translation

This N-channel MOSFET utilizes advanced SGT technology and design to deliver excellent on-resistance RDS(on) with low gate charge. It is suitable for a wide range of applications.

Features

AI Translation
  • Drain-source voltage V<sub>DS</sub> = 40 V, drain current I<sub>D</sub> = 55 A, on-resistance R<sub>DS(ON)</sub> < 5 mΩ at gate-source voltage V<sub>GS</sub> = 10 V
  • Low gate charge
  • RoHS-compliant devices available
  • Advanced high cell density trench technology for ultra-low on-resistance R<sub>DS(ON)</sub>
  • Excellent package with good thermal dissipation performance

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management for portable/desktop PCs
  • DC/DC conversion