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DOINGTER DON40DN06RoHS

Manufacturer
DOINGTERAsian Brands
MPN
DON40DN06
LCSC Part #
C42420916
Packaging
DFN-8D(5x6)
Customer #
Key Attributes
MOSFET N-CH ARR 60V 40A DFN-8D(5x6)
Datasheetpdf iconDOINGTER DON40DN06
In-Stock: 4,995
4,995 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.2433$ 1.22
50+$ 0.191$ 9.55
150+$ 0.1687$ 25.31
500+$ 0.1407$ 70.35
2,500+$ 0.1283$ 320.75
5,000+$ 0.1208$ 604.00
Standard Packaging5000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDOINGTER
PackagingDFN-8D(5x6)
Drain to Source Voltage60V
Output Capacitance(Coss)113pF
Current - Continuous Drain(Id)40A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation56W
RDS(on)17mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)92pF
Number2 N-Channel
Input Capacitance(Ciss)1.899nF
Gate Charge(Qg)40nC@10V
TypeN-Channel
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Introduction

AI Translation

These dual N-channel enhancement-mode power MOSFETs are fabricated using trench DMOS technology. This advanced technology has been specifically designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are ideally suited for high-efficiency, fast-switching applications.

Features

AI Translation
  • VDS = 60 V, ID = 40 A, RDS(ON) < 17 mΩ (at VGS = 10 V)
  • Low gate charge.
  • Eco-friendly devices available.
  • Advanced high cell density trench technology for ultra-low RDS(ON).
  • Excellent package thermal dissipation performance.