LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
Cart
DOINGTER DON140N04 product image
  • DON140N04 thumbnail 1
  • DON140N04 thumbnail 2
  • DON140N04 thumbnail 3
  • Pinout Diagram
  • Footprint Diagram
Images for reference only

DOINGTER DON140N04RoHS

Manufacturer
DOINGTERAsian Brands
MPN
DON140N04
LCSC Part #
C42420906
Packaging
DFN5x6-8
Customer #
Key Attributes
MOSFET N-CH 40V 140A DFN5x6-8
Datasheetpdf iconDOINGTER DON140N04
In-Stock: 4,765
4,765 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.2085$ 1.04
50+$ 0.182$ 9.10
150+$ 0.1707$ 25.61
500+$ 0.1566$ 78.30
2,500+$ 0.1503$ 375.75
5,000+$ 0.1465$ 732.50
Standard Packaging5000/Full Reel
Better price for more quantity?
$

Products Specifications

Show similar products (0) >
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDOINGTER
PackagingDFN5x6-8
Drain to Source Voltage40V
Current - Continuous Drain(Id)140A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation83W
RDS(on)3.5mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)473pF
Number1 N-channel
Input Capacitance(Ciss)3.829nF
Gate Charge(Qg)65nC@32V
TypeN-Channel
Report an ErrorShow similar products (0) >

Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging5000
Sales UnitPiece

Introduction

AI Translation

This N-channel MOSFET, utilizing advanced SGT technology and design, delivers excellent on-resistance (RDS(on)) with low gate charge, suitable for a wide range of applications.

Features

AI Translation
  • Drain-source voltage (VDS) = 40 V, drain current (ID) = 140 A, on-resistance (RDS(ON)) < 2 mΩ at gate-source voltage (VGS) = 10 V
  • Low gate charge
  • RoHS-compliant devices available
  • Ultra-low RDS(ON) achieved via advanced high cell-density trench technology
  • Superior package with excellent thermal dissipation performance