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ElecSuper ESBSS138WT1G product image
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ElecSuper ESBSS138WT1GRoHS

Manufacturer
ElecSuperAsian Brands
MPN
ESBSS138WT1G
LCSC Part #
C42420861
Packaging
SOT-323
Customer #
Key Attributes
MOSFET 60V 0.3A SOT-323
Datasheetpdf iconElecSuper ESBSS138WT1G
In-Stock: 2,240
2,240 In stock, ships now
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QtyUnit PriceTotal Amount
20+$ 0.0233$ 0.47
200+$ 0.0182$ 3.64
600+$ 0.0153$ 9.18
3,000+$ 0.0136$ 40.80
9,000+$ 0.0121$ 108.90
21,000+$ 0.0113$ 237.30
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingSOT-323
Drain to Source Voltage60V
Current - Continuous Drain(Id)300mA
Gate Threshold Voltage (Vgs(th))1.1V
Pd - Power Dissipation350mW
Reverse Transfer Capacitance (Crss@Vds)1.3pF
RDS(on)1.8Ω@10V
Number1 N-channel
Input Capacitance(Ciss)15pF
Gate Charge(Qg)1.6nC@4.5V
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Additional Information

TypeDetails
Minimum20
Multiple20
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

The ESBSS138WT1G is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. Device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product ESBSS138WT1G is Pb-free.

Features

AI Translation
  • 60V, RDS(ON)=1.5Ω(TYP.) @VGS=10V
  • Material: Halogen free
  • RDS(ON)=1.6Ω(TYP.) @VGS=4.5V
  • Reliable and rugged
  • Use trench MOSFET technology
  • Avalanche Rated
  • High density cell design for low RDS(on)
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Power management in portable/desktop PCs
  • DC/DC conversion