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ElecSuper ES2N7002KDW1T1G product image
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ElecSuper ES2N7002KDW1T1GRoHS

Manufacturer
ElecSuperAsian Brands
MPN
ES2N7002KDW1T1G
LCSC Part #
C42420838
Packaging
SOT-363
Customer #
Key Attributes
MOSFET 60V 300mA SOT-363
Datasheetpdf iconElecSuper ES2N7002KDW1T1G
In-Stock: 2,600
2,600 In stock, ships now
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QtyUnit PriceTotal Amount
20+$ 0.033$ 0.66
200+$ 0.0257$ 5.14
600+$ 0.0217$ 13.02
3,000+$ 0.0193$ 57.90
9,000+$ 0.0171$ 153.90
21,000+$ 0.016$ 336.00
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingSOT-363
Drain to Source Voltage60V
Current - Continuous Drain(Id)300mA
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation350mW
RDS(on)1.85Ω@10V
Reverse Transfer Capacitance (Crss@Vds)4pF
Number2 N-Channel
Input Capacitance(Ciss)28pF
Gate Charge(Qg)1.8nC@4.5V
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Additional Information

TypeDetails
Minimum20
Multiple20
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

The ES2N7002KDW1T1G is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. Device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product ES2N7002KDW1T1G is Pb-free.

Features

AI Translation
  • 60V, RDS(ON)=1.85Ω(TYP.) VGS=10V
  • RDS(ON)=2.05Ω(TYP.) VGS=4.5V
  • Use trench MOSFET technology
  • High density cell design for low RDS(on)
  • ESD Protection - HBM: 2kV
  • Material: Halogen free
  • Reliable and rugged
  • Avalanche Rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switch
  • Power management in portable/desktop PCs
  • DC/DC conversion