ElecSuper ES2N7002KLT1G
| Manufacturer | ElecSuperAsian Brands |
| MPN | ES2N7002KLT1G |
| LCSC Part # | C42420774 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET 60V 300mA SOT-23 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ElecSuper | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 300mA | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Pd - Power Dissipation | 350mW | |
| RDS(on) | 1.8Ω@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 28pF | |
| Gate Charge(Qg) | 1.8nC@10V |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 50 |
| Multiple | 50 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The ES2N7002KLT1G is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. Device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product ES2N7002KLT1G is Pb-free.
Features
AI Translation
- 60V, RDS(ON)=1.85Ω(TYP.) @VGS=10V
- RDS(ON)=2.05Ω(TYP.) @VGS=4.5V
- Use trench MOSFET technology
- High density cell design for low RDS(on)
- ESD Protection - HBM : 2kV
- Material: Halogen free
- Reliable and rugged
- Avalanche Rated
- Low leakage current
Applications
AI Translation
- PWM applications
- Power management in portable/desktop PCs
- DC/DC conversion
In-Stock: 1,050
1,050 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 50+ | $ 0.0121 | $ 0.61 |
| 500+ | $ 0.0094 | $ 4.70 |
| 3,000+ | $ 0.008 | $ 24.00 |
| 6,000+ | $ 0.0071 | $ 42.60 |
| 24,000+ | $ 0.0063 | $ 151.20 |
| 51,000+ | $ 0.0059 | $ 300.90 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ElecSuper | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 300mA | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Pd - Power Dissipation | 350mW | |
| RDS(on) | 1.8Ω@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 28pF | |
| Gate Charge(Qg) | 1.8nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 50 |
| Multiple | 50 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The ES2N7002KLT1G is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. Device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product ES2N7002KLT1G is Pb-free.
Features
AI Translation
- 60V, RDS(ON)=1.85Ω(TYP.) @VGS=10V
- RDS(ON)=2.05Ω(TYP.) @VGS=4.5V
- Use trench MOSFET technology
- High density cell design for low RDS(on)
- ESD Protection - HBM : 2kV
- Material: Halogen free
- Reliable and rugged
- Avalanche Rated
- Low leakage current
Applications
AI Translation
- PWM applications
- Power management in portable/desktop PCs
- DC/DC conversion
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



