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ElecSuper ES2N7002KLT1G product image
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ElecSuper ES2N7002KLT1GRoHS

Manufacturer
ElecSuperAsian Brands
MPN
ES2N7002KLT1G
LCSC Part #
C42420774
Packaging
SOT-23
Customer #
Key Attributes
MOSFET 60V 300mA SOT-23
Datasheetpdf iconElecSuper ES2N7002KLT1G
In-Stock: 1,050
1,050 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
50+$ 0.0121$ 0.61
500+$ 0.0094$ 4.70
3,000+$ 0.008$ 24.00
6,000+$ 0.0071$ 42.60
24,000+$ 0.0063$ 151.20
51,000+$ 0.0059$ 300.90
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingSOT-23
Drain to Source Voltage60V
Current - Continuous Drain(Id)300mA
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation350mW
RDS(on)1.8Ω@10V
Reverse Transfer Capacitance (Crss@Vds)4pF
Number1 N-channel
Input Capacitance(Ciss)28pF
Gate Charge(Qg)1.8nC@10V

Additional Information

TypeDetails
Minimum50
Multiple50
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

The ES2N7002KLT1G is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. Device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product ES2N7002KLT1G is Pb-free.

Features

AI Translation
  • 60V, RDS(ON)=1.85Ω(TYP.) @VGS=10V
  • RDS(ON)=2.05Ω(TYP.) @VGS=4.5V
  • Use trench MOSFET technology
  • High density cell design for low RDS(on)
  • ESD Protection - HBM : 2kV
  • Material: Halogen free
  • Reliable and rugged
  • Avalanche Rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Power management in portable/desktop PCs
  • DC/DC conversion