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UMW IRFR3410TR(UMW) product image
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UMW IRFR3410TR(UMW)RoHS

Manufacturer
UMWAsian Brands
MPN
IRFR3410TR(UMW)
LCSC Part #
C42420620
Packaging
TO-252
Customer #
Key Attributes
MOSFET N-CH 100V 30A TO-252
Datasheetpdf iconUMW IRFR3410TR(UMW)
In-Stock: 2,480
2,480 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.2876$ 1.44
50+$ 0.2254$ 11.27
150+$ 0.1988$ 29.82
500+$ 0.1656$ 82.80
2,500+$ 0.1508$ 377.00
5,000+$ 0.1419$ 709.50
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerUMW
PackagingTO-252
Output Capacitance(Coss)225pF
Pd - Power Dissipation70W
ConfigurationStandalone
Drain to Source Voltage100V
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Reverse Transfer Capacitance (Crss@Vds)205pF
RDS(on)30mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.55nF
Gate Charge(Qg)55nC
Vgs±20V
TypeN-Channel

Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

IRFR3410 employs advanced trench technology to deliver excellent on-resistance RDS(ON) and low gate charge, making it suitable for a wide range of applications.

Features

AI Translation
  • Drain-source voltage V<sub>DS</sub> = 100 V, drain current I<sub>D</sub> = 30 A
  • On-resistance R<sub>DS(ON)</sub> < 30 mΩ at gate-source voltage V<sub>GS</sub> = 10 V
  • High-density cell design for reduced R<sub>DS(ON)</sub>
  • Fully characterized avalanche voltage and current
  • High single-pulse avalanche energy E<sub>AS</sub> with excellent stability and consistency
  • Superior thermal dissipation package

Applications

AI Translation
  • Power switch applications
  • Hard switching and high-frequency circuits
  • Uninterruptible power supplies