ElecSuper IRLML0060TRPBF(ES)
| Manufacturer | ElecSuperAsian Brands |
| MPN | IRLML0060TRPBF(ES) |
| LCSC Part # | C42412353 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET N-CH 60V 3A SOT-23 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ElecSuper | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 30pF | |
| Current - Continuous Drain(Id) | 3A | |
| Gate Threshold Voltage (Vgs(th)) | 1.4V | |
| Pd - Power Dissipation | 1.5W | |
| RDS(on) | 75mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 23pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 352pF | |
| Gate Charge(Qg) | 9nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
IRLML0060TRPBF(ES) is an N-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent RDS(ON) with low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product IRLML0060TRPBF(ES) is lead-free.
Features
AI Translation
- 60V, RDS(ON) = 75 mΩ (typical), VGS = 10V
- RDS(ON) = 85 mΩ (typical), VGS = 4.5V
- High-density cell design for low RDS(ON)
- Halogen-free material
- Robust and reliable
- Avalanche-rated
- Low leakage current
Applications
AI Translation
- PWM applications
- Load switching
- Power management for portable/desktop PCs
- DC/DC conversion
In-Stock: 1,800
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 10+ | $ 0.0415 | $ 0.42 |
| 100+ | $ 0.0328 | $ 3.28 |
| 300+ | $ 0.0285 | $ 8.55 |
| 3,000+ | $ 0.0252 | $ 75.60 |
| 6,000+ | $ 0.0226 | $ 135.60 |
| 9,000+ | $ 0.0213 | $ 191.70 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ElecSuper | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 30pF | |
| Current - Continuous Drain(Id) | 3A | |
| Gate Threshold Voltage (Vgs(th)) | 1.4V | |
| Pd - Power Dissipation | 1.5W | |
| RDS(on) | 75mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 23pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 352pF | |
| Gate Charge(Qg) | 9nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
IRLML0060TRPBF(ES) is an N-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent RDS(ON) with low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product IRLML0060TRPBF(ES) is lead-free.
Features
AI Translation
- 60V, RDS(ON) = 75 mΩ (typical), VGS = 10V
- RDS(ON) = 85 mΩ (typical), VGS = 4.5V
- High-density cell design for low RDS(ON)
- Halogen-free material
- Robust and reliable
- Avalanche-rated
- Low leakage current
Applications
AI Translation
- PWM applications
- Load switching
- Power management for portable/desktop PCs
- DC/DC conversion
C42412353 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



