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ElecSuper IRLML0060TRPBF(ES)RoHS

Manufacturer
ElecSuperAsian Brands
MPN
IRLML0060TRPBF(ES)
LCSC Part #
C42412353
Packaging
SOT-23
Customer #
Key Attributes
MOSFET N-CH 60V 3A SOT-23
Datasheetpdf iconElecSuper IRLML0060TRPBF(ES)
In-Stock: 1,800
1,800 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
10+$ 0.0415$ 0.42
100+$ 0.0328$ 3.28
300+$ 0.0285$ 8.55
3,000+$ 0.0252$ 75.60
6,000+$ 0.0226$ 135.60
9,000+$ 0.0213$ 191.70
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingSOT-23
Drain to Source Voltage60V
Output Capacitance(Coss)30pF
Current - Continuous Drain(Id)3A
Gate Threshold Voltage (Vgs(th))1.4V
Pd - Power Dissipation1.5W
RDS(on)75mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)23pF
Number1 N-channel
Input Capacitance(Ciss)352pF
Gate Charge(Qg)9nC@10V
Vgs±20V
TypeN-Channel

Additional Information

TypeDetails
Minimum10
Multiple10
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

IRLML0060TRPBF(ES) is an N-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent RDS(ON) with low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product IRLML0060TRPBF(ES) is lead-free.

Features

AI Translation
  • 60V, RDS(ON) = 75 mΩ (typical), VGS = 10V
  • RDS(ON) = 85 mΩ (typical), VGS = 4.5V
  • High-density cell design for low RDS(ON)
  • Halogen-free material
  • Robust and reliable
  • Avalanche-rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management for portable/desktop PCs
  • DC/DC conversion