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ElecSuper BSS138PS,115(ES) product image
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ElecSuper BSS138PS,115(ES)RoHS

Manufacturer
ElecSuperAsian Brands
MPN
BSS138PS,115(ES)
LCSC Part #
C42412330
Packaging
SOT-363
Customer #
Key Attributes
MOSFET N-CH 60V 300mA SOT-363
Datasheetpdf iconElecSuper BSS138PS,115(ES)
In-Stock: 3,000
3,000 In stock, ships now
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QtyUnit PriceTotal Amount
20+$ 0.0358$ 0.72
200+$ 0.0279$ 5.58
600+$ 0.0235$ 14.10
3,000+$ 0.0208$ 62.40
9,000+$ 0.0186$ 167.40
21,000+$ 0.0173$ 363.30
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingSOT-363
Drain to Source Voltage60V
Output Capacitance(Coss)3.3pF
Current - Continuous Drain(Id)300mA
Gate Threshold Voltage (Vgs(th))1.1V
Pd - Power Dissipation350mW
RDS(on)1.8Ω@10V;2Ω@4.5V
Reverse Transfer Capacitance (Crss@Vds)1.3pF
Number2 N-Channel
Input Capacitance(Ciss)15pF
Gate Charge(Qg)1.6nC@4.5V
TypeN-Channel
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Additional Information

TypeDetails
Minimum20
Multiple20
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

BSS138PS,115(ES) is an N-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent RDS(ON) with low gate charge. This device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product BSS138PS,115(ES) is lead-free.

Features

AI Translation
  • 60V, RDS(ON) = 1.8Ω (typical) at VGS = 10V
  • RDS(ON) = 2.0Ω (typical) at VGS = 4.5V
  • Trench MOSFET technology
  • High-density cell design for low RDS(ON)
  • Halogen-free materials
  • Robust and reliable
  • Avalanche rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management for portable/desktop computers
  • DC/DC conversion