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ElecSuper ESD3045DN33 product image
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ElecSuper ESD3045DN33RoHS

Manufacturer
ElecSuperAsian Brands
MPN
ESD3045DN33
LCSC Part #
C42412308
Packaging
PDFN-8L(5x6)
Customer #
Key Attributes
MOSFET N-CH+P-CH ARR 30V 25A PDFN-8L(5x6)
Datasheetpdf iconElecSuper ESD3045DN33
In-Stock: 4,965
4,965 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
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QtyUnit PriceTotal Amount
5+$ 0.1815$ 0.91
50+$ 0.1585$ 7.93
150+$ 0.1486$ 22.29
500+$ 0.1363$ 68.15
2,500+$ 0.1309$ 327.25
5,000+$ 0.1276$ 638.00
Standard Packaging5000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingPDFN-8L(5x6)
Drain to Source Voltage30V
Output Capacitance(Coss)80pF;138pF
Current - Continuous Drain(Id)25A
Gate Threshold Voltage (Vgs(th))1.7V;1.5V
Pd - Power Dissipation25W;26.5W
Reverse Transfer Capacitance (Crss@Vds)60pF;115pF
RDS(on)18mΩ@10V;15mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)490pF;980pF
Gate Charge(Qg)5.2nC@10V;20nC@10V
TypeN-Channel + P-Channel
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Introduction

AI Translation

The ESD3045DN33 utilizes advanced trench technology MOSFET, delivering excellent RDS(ON) and low gate charge. The complementary MOSFET can be used to form level-shifting high-side switches and is suitable for many other applications.

Features

AI Translation
  • N-Channel
  • 30V RDS(ON) = 18mΩ (typical) @ VGS = 10V
  • RDS(ON) = 24mΩ (typical) @ VGS = 4.5V
  • P-Channel
  • -30V RDS(ON) = 15mΩ (typical) @ VGS = -10V
  • RDS(ON) = 22.5mΩ (typical) @ VGS = -4.5V
  • Fast switching
  • High-density cell design for low RDS(ON)
  • Halogen-free material
  • Robust and reliable
  • Avalanche rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management for portable/desktop PCs
  • DC/DC conversion