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ElecSuper ESGNH10R90 product image
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ElecSuper ESGNH10R90RoHS

Manufacturer
ElecSuperAsian Brands
MPN
ESGNH10R90
LCSC Part #
C42412302
Packaging
PDFN-8L(3x3)
Customer #
Key Attributes
MOSFET N-CH 100V 12.8A PDFN-8L(3x3)
Datasheetpdf iconElecSuper ESGNH10R90
In-Stock: 4,275
4,275 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1522$ 0.76
50+$ 0.1317$ 6.59
150+$ 0.1229$ 18.44
500+$ 0.1119$ 55.95
2,500+$ 0.107$ 267.50
5,000+$ 0.1041$ 520.50
Standard Packaging5000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingPDFN-8L(3x3)
Drain to Source Voltage100V
Output Capacitance(Coss)29pF
Current - Continuous Drain(Id)12.8A
Gate Threshold Voltage (Vgs(th))1.65V
Pd - Power Dissipation31W
Reverse Transfer Capacitance (Crss@Vds)1.4pF
RDS(on)90mΩ@10V;120mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)206pF
Gate Charge(Qg)4.2nC@10V
TypeN-Channel
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Introduction

AI Translation

ESGNH10R90 is an N-channel enhancement-mode MOSFET. Utilizing advanced shielded gate trench technology and design, it delivers excellent RDS(ON) with low gate charge. This device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product ESGNH10R90 is lead-free.

Features

AI Translation
  • 100V, RDS(ON) = 90 mΩ (typical), VGS = 10V
  • RDS(ON) = 120 mΩ (typical), VGS = 4.5V
  • Trench MOSFET technology
  • High-density cell design for low RDS(ON)
  • Halogen-free material
  • Robust and reliable
  • Avalanche rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management for portable/desktop PCs
  • DC/DC conversion