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KTP FQD2N65SERoHS

Manufacturer
KTPAsian Brands
MPN
FQD2N65SE
LCSC Part #
C42404739
Packaging
TO-252
Customer #
Key Attributes
MOSFET N-CH 650V 2A TO-252
Datasheetpdf iconKTP FQD2N65SE
In-Stock: 2,245
2,245 In stock, ships now
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QtyUnit PriceTotal Amount
5+$ 0.0899$ 0.45
50+$ 0.0711$ 3.56
150+$ 0.0617$ 9.26
500+$ 0.0546$ 27.30
2,500+$ 0.049$ 122.50
5,000+$ 0.0461$ 230.50
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerKTP
PackagingTO-252
Drain to Source Voltage650V
Configuration-
Output Capacitance(Coss)50pF
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation40W
Reverse Transfer Capacitance (Crss@Vds)7pF
RDS(on)4.8Ω@10V
Number1 N-channel
Input Capacitance(Ciss)350pF
Gate Charge(Qg)110nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging2500
Sales UnitPiece

Features

AI Translation
  • Low intrinsic capacitance.
  • Excellent switching characteristics.
  • Extended safe operating area.
  • Unmatched gate charge: Qg = 90nC (typical).
  • BVDSS = 650V, ID = 2A
  • RDS(on): 4.8 Ω (max) @VG = 10V
  • 100% avalanche tested
  • TO-252