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KTP FQD2N60SERoHS

Manufacturer
KTPAsian Brands
MPN
FQD2N60SE
LCSC Part #
C42404738
Packaging
TO-252
Customer #
Key Attributes
MOSFET N-CH 650V 2A TO-252
Datasheetpdf iconKTP FQD2N60SE
In-Stock: 2,085
2,085 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.0955$ 0.48
50+$ 0.0755$ 3.78
150+$ 0.0655$ 9.83
500+$ 0.058$ 29.00
2,500+$ 0.052$ 130.00
5,000+$ 0.049$ 245.00
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerKTP
PackagingTO-252
Drain to Source Voltage650V
Configuration-
Output Capacitance(Coss)50pF
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation40W
Reverse Transfer Capacitance (Crss@Vds)7pF
RDS(on)4.8Ω@10V
Number1 N-channel
Input Capacitance(Ciss)350pF
Gate Charge(Qg)110nC@10V
TypeN-Channel

Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

These N-channel enhancement-mode power MOSFETs are fabricated using trench DMOS technology. This advanced technology is specifically designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are ideally suited for high-efficiency fast-switching applications.

Features

AI Translation
  • Low intrinsic capacitance.
  • Excellent switching characteristics.
  • Extended safe operating area.
  • Unrivaled gate charge: Qg = 90nC (typ).
  • BVDSS = 650V, ID = 2A
  • RDS(on): 4.8 Ω (max) @VG = 10V
  • 100% avalanche tested

Applications

AI Translation
  • Motor Drive - Power Tools - LED Lighting