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DOINGTER DOW10N02RoHS

Manufacturer
DOINGTERAsian Brands
MPN
DOW10N02
LCSC Part #
C42395832
Packaging
SOT-89
Customer #
Key Attributes
MOSFET N-CH 20V 10A SOT-89
Datasheetpdf iconDOINGTER DOW10N02
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDOINGTER
PackagingSOT-89
Drain to Source Voltage20V
Configuration-
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.4W
RDS(on)10.4mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)149pF
Number1 N-channel
Input Capacitance(Ciss)1.194nF
Gate Charge(Qg)12nC@4.5V
TypeN-Channel
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Additional Information

TypeDetails
Minimum10
Multiple10
Standard Packaging1000
Sales UnitPiece

Introduction

AI Translation

This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.

Features

AI Translation
  • VDS = 20V, ID = 10A, RDS(ON) < 10.4mΩ @ VGS = 4.5V
  • Low gate charge.
  • Green device available.
  • Advanced high cell denity trench technology for ultra low RDS(ON).
  • Excellent package for good heat dissipation.