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HXY MOSFET HIDK12G65C5RoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
HIDK12G65C5
LCSC Part #
C42389214
Packaging
TO-263
Customer #
Key Attributes
DIODE SIC 650V 30A TO-263
Datasheetpdf iconHXY MOSFET HIDK12G65C5
In-Stock: 36
36 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 2.066$ 2.07
10+$ 1.751$ 17.51
30+$ 1.5531$ 46.59
100+$ 1.3362$ 133.62
500+$ 1.2444$ 622.20
800+$ 1.2048$ 963.84
Standard Packaging800/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Diodes/Rectifiers/Single Diodes
ManufacturerHXY MOSFET
PackagingTO-263
Diode Configuration1 Independent
Operating Junction Temperature Range-55℃~+175℃
Voltage - DC Reverse (Vr) (Max)650V
Voltage - Forward(Vf@If)1.35V@12A
Reverse Leakage Current (Ir)50uA@650V
Non-Repetitive Peak Forward Surge Current90A
Current - Rectified30A

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging800
Sales UnitPiece

Features

AI Translation
  • Low conduction loss due to low V<sub>F</sub>
  • Ultra-low switching loss via minimal Q<sub>C</sub>
  • High robustness due to superior surge current capability
  • Industry-standard quality and reliability

Applications

AI Translation
  • Uninterruptible power supplies
  • Power inverters
  • High-performance switching power supplies
  • Power factor correction