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HXY MOSFET HFFSB10120AF085 product image
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HXY MOSFET HFFSB10120AF085RoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
HFFSB10120AF085
LCSC Part #
C42389197
Packaging
TO-263
Customer #
Key Attributes
DIODE SIC 1.2kV 30A TO-263
Datasheetpdf iconHXY MOSFET HFFSB10120AF085
In-Stock: 3
3 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 4.8644$ 4.0375$ 4.04
10+$ 4.1584$ 3.4515$ 34.52
30+$ 3.7395$ 3.1038$ 93.11
100+$ 3.3143$ 2.7509$ 275.09
500+$ 3.1192$ 2.5890$ 1294.50
800+$ 3.0304$ 2.5153$ 2012.24
Standard Packaging800/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Diodes/Rectifiers/Single Diodes
ManufacturerHXY MOSFET
PackagingTO-263
Diode Configuration1 Independent
Operating Junction Temperature Range-55℃~+175℃
Voltage - DC Reverse (Vr) (Max)1.2kV
Voltage - Forward(Vf@If)1.4V@10A
Reverse Leakage Current (Ir)100uA@1200V
Non-Repetitive Peak Forward Surge Current90A
Current - Rectified30A
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging800
Sales UnitPiece

Features

AI Translation
  • Low forward voltage drop for reduced conduction loss
  • Ultra-low reverse recovery charge for minimal switching loss
  • Enhanced surge current capability for high robustness
  • Industry-standard quality and reliability

Applications

AI Translation
  • Uninterruptible power supplies
  • Power inverters
  • High-performance switching power supplies
  • Power factor correction