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HXY MOSFET HNVDSH20120C product image
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HXY MOSFET HNVDSH20120CRoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
HNVDSH20120C
LCSC Part #
C42389185
Packaging
TO-247-2L
Customer #
Key Attributes
DIODE SIC 1.2kV 54A TO-247-2L
Datasheetpdf iconHXY MOSFET HNVDSH20120C
In-Stock: 5
5 In stock, ships now
Not recommended for new designs
Once stock is depleted, this item will be marked as "Out of Stock."
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QtyUnit PriceTotal Amount
1+$ 5.5244$ 5.52
10+$ 4.7216$ 47.22
30+$ 4.2456$ 127.37
90+$ 3.7649$ 338.84
510+$ 3.5412$ 1806.01
990+$ 3.4413$ 3406.89
Standard Packaging30/Full Tube

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Diodes/Rectifiers/Single Diodes
ManufacturerHXY MOSFET
PackagingTO-247-2L
Diode Configuration1 Independent
Operating Junction Temperature Range-55℃~+175℃
Voltage - DC Reverse (Vr) (Max)1.2kV
Voltage - Forward(Vf@If)1.8V@20A
Reverse Leakage Current (Ir)35uA@1200V
Non-Repetitive Peak Forward Surge Current130A
Current - Rectified54A

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging30
Sales UnitPiece

Features

AI Translation
  • 1.2kV Schottky Rectifier
  • Zero reverse recovery current
  • High-frequency operation
  • Temperature-independent switching characteristics
  • Extremely fast switching speed
  • V<sub>F</sub> with positive temperature coefficient
  • Increased creepage/clearance distance

Applications

AI Translation
  • Switch-mode power supplies
  • Boost diode in power factor correction or DC/DC conversion stages
  • Freewheeling diode in inverter stages
  • AC/DC converters