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Infineon FP25R12W2T7 product image
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Infineon FP25R12W2T7RoHS

Manufacturer
Infineon
MPN
FP25R12W2T7
LCSC Part #
C42387481
Packaging
Through Hole,62.8x56.7mm
Customer #
Key Attributes
EasyPIM Module with TRENCHSTOP IGBT7 and Emitter Controlled Diode and NTC
Datasheetpdf iconInfineon FP25R12W2T7

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/IGBTs/IGBT Modules
ManufacturerInfineon
PackagingThrough Hole,62.8x56.7mm
Td(off)190ns
Td(on)35ns
Current - Collector(Ic)25A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)17pF
Input Capacitance(Cies)4.77nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5.15V@0.525mA
Gate Charge(Qg)395nC@600V
Operating Temperature-40℃~+175℃
Vce Saturation(VCE(sat))1.82V@25A,15V
Switching Energy(Eoff)1.68mJ
Turn-On Energy (Eon)1.78mJ
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging15
Sales UnitPiece

Features

AI Translation
  • Low VCEsat
  • TrenchstopTM IGBT7
  • Overload operation up to 175℃
  • 2.5 kV AC 1min insulation
  • Al₂O₃ substrate with low thermal resistance
  • High power density
  • Compact design
  • Solder contact technology

Applications

AI Translation
  • Auxiliary inverters
  • Air conditioning
  • Motor drives
In-Stock: 35
35 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 32.7216$ 32.72
30+$ 31.5735$ 947.21
Standard Packaging15/Full Box
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