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ElecSuper BSS8402DWQ-7(ES)RoHS

Manufacturer
ElecSuperAsian Brands
MPN
BSS8402DWQ-7(ES)
LCSC Part #
C42379948
Packaging
SOT-363
Customer #
Key Attributes
MOSFET P-CH 60V 160mA SOT-363
Datasheetpdf iconElecSuper BSS8402DWQ-7(ES)
In-Stock: 2,980
2,980 In stock, ships now
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QtyUnit PriceTotal Amount
20+$ 0.0346$ 0.69
200+$ 0.0274$ 5.48
600+$ 0.0238$ 14.28
3,000+$ 0.0211$ 63.30
9,000+$ 0.0189$ 170.10
21,000+$ 0.0178$ 373.80
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingSOT-363
Drain to Source Voltage60V
Output Capacitance(Coss)4pF
Current - Continuous Drain(Id)160mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation230mW
Reverse Transfer Capacitance (Crss@Vds)1.6pF
RDS(on)3.5Ω@10V;4.5Ω@4.5V
Input Capacitance(Ciss)17pF
Gate Charge(Qg)1.1nC@10V
TypeP-Channel

Additional Information

TypeDetails
Minimum20
Multiple20
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

BSS8402DWQ-7(ES) is a P-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent on-state resistance RDS(ON) at low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product BSS8402DWQ-7(ES) is lead-free.

Features

AI Translation
  • Voltage rating -60V, on-resistance RDS(ON) = 3.5Ω (typical), gate-source voltage VGS = -10V
  • On-resistance RDS(ON) = 4.5Ω (typical), gate-source voltage VGS = -4.5V
  • Fast switching
  • High-density cell design for low RDS(on)
  • Material: halogen-free
  • Robust and reliable
  • Avalanche rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management for portable/desktop PCs
  • DC/DC conversion