ElecSuper BSS84PH6327(ES)
| Manufacturer | ElecSuperAsian Brands |
| MPN | BSS84PH6327(ES) |
| LCSC Part # | C42379931 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET P-CH 60V 0.2A SOT-23 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ElecSuper | |
| Packaging | SOT-23 | |
| Configuration | - | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 200mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.2V | |
| Pd - Power Dissipation | 350mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.6pF | |
| RDS(on) | 6.3Ω@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 17pF | |
| Gate Charge(Qg) | 1.1nC@4.5V | |
| Type | P-Channel |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 50 |
| Multiple | 50 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The BSS84PH6327(ES) is P-Channel enhancement MOS Field Effect Transistor. Uses advanced technology and design to provide excellent RDS(ON) with low gate charge. Device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product BSS84PH6327(ES) is Pb-free.
Features
AI Translation
- -60V, RDS(ON)=3.5Ω(Typ.) @VGS=-10V RDS(ON)=4.5Ω(Typ.) @VGS=-4.5V
- Fast Switching
- High density cell design for low RDS(on)
Applications
AI Translation
- Power management in portable/desktop PCs
- DC/DC conversion
In-Stock: 550
550 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 50+ | $ 0.0191 | $ 0.96 |
| 500+ | $ 0.0149 | $ 7.45 |
| 3,000+ | $ 0.0125 | $ 37.50 |
| 6,000+ | $ 0.0111 | $ 66.60 |
| 24,000+ | $ 0.0099 | $ 237.60 |
| 51,000+ | $ 0.0092 | $ 469.20 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ElecSuper | |
| Packaging | SOT-23 | |
| Configuration | - | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 200mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.2V | |
| Pd - Power Dissipation | 350mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.6pF | |
| RDS(on) | 6.3Ω@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 17pF | |
| Gate Charge(Qg) | 1.1nC@4.5V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 50 |
| Multiple | 50 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The BSS84PH6327(ES) is P-Channel enhancement MOS Field Effect Transistor. Uses advanced technology and design to provide excellent RDS(ON) with low gate charge. Device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product BSS84PH6327(ES) is Pb-free.
Features
AI Translation
- -60V, RDS(ON)=3.5Ω(Typ.) @VGS=-10V RDS(ON)=4.5Ω(Typ.) @VGS=-4.5V
- Fast Switching
- High density cell design for low RDS(on)
Applications
AI Translation
- Power management in portable/desktop PCs
- DC/DC conversion
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



