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HUASHUO HSCE1218 product image
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HUASHUO HSCE1218RoHS

Manufacturer
HUASHUOAsian Brands
MPN
HSCE1218
LCSC Part #
C42376799
Packaging
DFN-8(3.3x3.3)
Customer #
Key Attributes
MOSFET P-CH 12V 60A DFN-8(3.3x3.3)
Datasheetpdf iconHUASHUO HSCE1218
In-Stock: 2,780
2,780 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.3546$ 1.77
50+$ 0.2792$ 13.96
150+$ 0.246$ 36.90
500+$ 0.2052$ 102.60
3,000+$ 0.1871$ 561.30
6,000+$ 0.1766$ 1059.60
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHUASHUO
PackagingDFN-8(3.3x3.3)
Configuration-
Drain to Source Voltage12V
Output Capacitance(Coss)1.42nF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation83W
Reverse Transfer Capacitance (Crss@Vds)1.13nF
RDS(on)5.6mΩ@2.5V
Number1 P-Channel
Input Capacitance(Ciss)6.91nF
Gate Charge(Qg)41nC@4.5V
TypeP-Channel
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Introduction

AI Translation

HSCE1218 is a high cell density trench P-channel MOSFET that delivers excellent on-resistance (R<sub>DSon</sub>) and gate charge for most synchronous buck converter applications. The HSCE1218 complies with RoHS and green product requirements, and has passed full-function reliability qualification.

Features

AI Translation
  • Ultra-low gate charge
  • Available in green/eco-friendly package
  • Excellent CdV/dt immunity
  • Advanced high cell density trench technology