AGMSEMI AGM206MDP
| Manufacturer | AGMSEMIAsian Brands |
| MPN | AGM206MDP |
| LCSC Part # | C42372677 |
| Packaging | DFN-8(3x3) |
| Customer # | |
| Key Attributes | MOSFET N-CH ARR 20V 60A DFN-8(3x3) |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | AGMSEMI | |
| Packaging | DFN-8(3x3) | |
| Drain to Source Voltage | 20V | |
| Configuration | - | |
| Output Capacitance(Coss) | 200pF | |
| Current - Continuous Drain(Id) | 60A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 31W | |
| RDS(on) | 8mΩ@2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 130pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 2.246nF | |
| Gate Charge(Qg) | 23nC@4.5V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 5000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The AGM206MDP combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
Features
AI Translation
- Advance high cell density Trench technology
- Low RDS(ON) to minimize conductive loss
- Low Gate Charge for fast switching
- Low Thermal resistance
- 100% Avalanche tested
- 100% DVDS tested
Applications
AI Translation
- MB/VGA Vcore
- SMPS 2nd Synchronous Rectifier
- POL application
- BLDC Motor driver
In-Stock: 155
155 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.1491 | $ 0.75 |
| 50+ | $ 0.1171 | $ 5.86 |
| 150+ | $ 0.1034 | $ 15.51 |
| 500+ | $ 0.0862 | $ 43.10 |
| 2,500+ | $ 0.0786 | $ 196.50 |
| 5,000+ | $ 0.074 | $ 370.00 |
Standard Packaging5000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | AGMSEMI | |
| Packaging | DFN-8(3x3) | |
| Drain to Source Voltage | 20V | |
| Configuration | - | |
| Output Capacitance(Coss) | 200pF | |
| Current - Continuous Drain(Id) | 60A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 31W | |
| RDS(on) | 8mΩ@2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 130pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 2.246nF | |
| Gate Charge(Qg) | 23nC@4.5V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 5000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The AGM206MDP combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
Features
AI Translation
- Advance high cell density Trench technology
- Low RDS(ON) to minimize conductive loss
- Low Gate Charge for fast switching
- Low Thermal resistance
- 100% Avalanche tested
- 100% DVDS tested
Applications
AI Translation
- MB/VGA Vcore
- SMPS 2nd Synchronous Rectifier
- POL application
- BLDC Motor driver
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



