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GOODWORK SI2323DSRoHS

Manufacturer
GOODWORKAsian Brands
MPN
SI2323DS
LCSC Part #
C42186045
Packaging
SOT-23
Customer #
Key Attributes
MOSFET P-CH 20V 5A SOT-23
Datasheetpdf iconGOODWORK SI2323DS
In-Stock: 1,080
1,080 In stock, ships now
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QtyUnit PriceTotal Amount
20+$ 0.0357$ 0.71
200+$ 0.0283$ 5.66
600+$ 0.0245$ 14.70
3,000+$ 0.0217$ 65.10
9,000+$ 0.0195$ 175.50
21,000+$ 0.0183$ 384.30
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerGOODWORK
PackagingSOT-23
Drain to Source Voltage20V
Configuration-
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.56W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)39mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)1.44nF
Gate Charge(Qg)16.1nC@4.5V
TypeP-Channel
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Additional Information

TypeDetails
Minimum20
Multiple20
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

These P -Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on - state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.

Features

AI Translation
  • -20V, -5.0A, RDS(ON) = 30mΩ@VGS = -4.5V
  • Improved dv/dt capability
  • Fast switching
  • Green Device Available

Applications

AI Translation
  • Notebook
  • Load Switch
  • Battery Protection
  • Hand - held Instruments