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NH NJS65R280SRoHS

Manufacturer
NHAsian Brands
MPN
NJS65R280S
LCSC Part #
C41784097
Packaging
TO-252
Customer #
Key Attributes
MOSFET N-CH 650V 23A TO-252
Datasheetpdf iconNH NJS65R280S
In-Stock: 4,117
4,117 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.7562$ 0.76
10+$ 0.6069$ 6.07
30+$ 0.5323$ 15.97
100+$ 0.4576$ 45.76
500+$ 0.4122$ 206.10
1,000+$ 0.3895$ 389.50
Standard Packaging2500/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerNH
PackagingTO-252
Drain to Source Voltage650V
Configuration-
Current - Continuous Drain(Id)23A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.6V
Pd - Power Dissipation125W
RDS(on)280mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)1.5pF
Number1 N-channel
Input Capacitance(Ciss)1.6nF
Gate Charge(Qg)46nC@10V
TypeN-Channel
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Introduction

AI Translation

MPT075N10 is an N-channel enhancement-mode power MOSFET utilizing advanced dual-trench technology to reduce conduction losses, improve switching performance, and enhance avalanche energy. The device is suitable for synchronous rectification and high-speed switching applications.

Features

AI Translation
  • Low on-resistance R<sub>DS(ON)</sub> for high efficiency
  • Low gate charge for high-speed switching
  • High single-pulse avalanche energy for high reliability
  • 100% tested for unclamped inductive switching (UIS) and gate resistance (R<sub>G</sub>)

Applications

AI Translation
  • AC/DC Converters
  • Adapters and Chargers
  • LED Drivers
  • High-Frequency Circuits and Switching Power Supplies