Nexperia 2N7002AKRA-QZ
| Manufacturer | |
| MPN | 2N7002AKRA-QZ |
| LCSC Part # | C41727637 |
| Packaging | DFN1412-6 |
| Customer # | |
| Key Attributes | 320mA 2.2Ω@10V 420mW 1.7V 2 N-Channel DFN1412-6 FET, MOSFET Arrays RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | Nexperia | |
| Packaging | DFN1412-6 | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 1.6pF | |
| Configuration | - | |
| Current - Continuous Drain(Id) | 320mA | |
| RDS(on) | 2.2Ω@10V | |
| Pd - Power Dissipation | 420mW | |
| Gate Threshold Voltage (Vgs(th)) | 1.7V | |
| Drain to Source Voltage | 60V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.9pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 9.2pF | |
| Gate Charge(Qg) | 210pC | |
| Vgs | ±20V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 5000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
Dual N-channel enhancement-mode MOSFET using trench MOSFET technology, housed in an ultra-compact DFN1412-6 leadless SMT plastic package.
Features
AI Translation
- Logic level compatible
- Ultra-fast switching speed
- Trench MOSFET technology
- ESD protection
- AEC-Q101 qualified
Applications
AI Translation
- Relay driving
- High-speed line driving
- Low-side load switching
- Switching circuits
In-Stock: 58
58 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.2882 | $ 0.29 |
| 10+ | $ 0.2833 | $ 2.83 |
| 30+ | $ 0.2785 | $ 8.36 |
| 100+ | $ 0.2752 | $ 27.52 |
Standard Packaging5000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | Nexperia | |
| Packaging | DFN1412-6 | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 1.6pF | |
| Configuration | - | |
| Current - Continuous Drain(Id) | 320mA | |
| RDS(on) | 2.2Ω@10V | |
| Pd - Power Dissipation | 420mW | |
| Gate Threshold Voltage (Vgs(th)) | 1.7V | |
| Drain to Source Voltage | 60V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.9pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 9.2pF | |
| Gate Charge(Qg) | 210pC | |
| Vgs | ±20V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 5000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
Dual N-channel enhancement-mode MOSFET using trench MOSFET technology, housed in an ultra-compact DFN1412-6 leadless SMT plastic package.
Features
AI Translation
- Logic level compatible
- Ultra-fast switching speed
- Trench MOSFET technology
- ESD protection
- AEC-Q101 qualified
Applications
AI Translation
- Relay driving
- High-speed line driving
- Low-side load switching
- Switching circuits
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



