Qorvo TQP7M9102

The TQP7M9102 is a high linearity driver amplifier in a lowcost, RoHS compliant, surface mount package. This InGaP/GaAs HBT delivers high performance across a broad range of frequencies with +44 dBm OIP3 and +27.5 dBm P1dB while only consuming 135 mA quiescent current. All devices are 100% RF and DC tested. The TQP7M9102 incorporates on-chip features that differentiate it from other products in the market. The amplifier integrates an on-chip DC over-voltage and RF over-drive protection. This protects the amplifier from electrical DC voltage surges and high input RF input power levels that may occur in a system. On-chip ESD protection allows the amplifier to have a very robust Class 1C HBM ESD rating. The TQP7M9102 is targeted for use as a driver amplifier in wireless infrastructure where high linearity, medium power, and high efficiency are required. The device an excellent candidate for transceiver line cards in current and next generation multi-carrier 3G / 4G base stations.

• 400 – 4000 MHz
• +27.5 dBm P1dB +44 dBm Output IP3
• 17.8 dB Gain at 2140 MHz
• +5 V Single Supply, 135 mA Current
• Internal RF Overdrive Protection
• Internal DC Overvoltage Protection
• On-Chip ESD Protection
• SOT-89 Package

• Repeaters
• Mobile Infrastructure CDMA / WCDMA / LTE
• General Purpose Wireless