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TOSHIBA TBD62783AFNG(Z,EL) product image
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TOSHIBA TBD62783AFNG(Z,EL)RoHS

Manufacturer
TOSHIBA
MPN
TBD62783AFNG(Z,EL)
LCSC Part #
C4153829
Packaging
SSOP-18
Customer #
Key Attributes
8channel source type DMos transistor array
Datasheetpdf iconTOSHIBA TBD62783AFNG(Z,EL)

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays
ManufacturerTOSHIBA
PackagingSSOP-18
Output Leakage Current(Icex)-
Collector - Emitter Voltage VCEO-
Input Capacitiance(Ci)-
Reverse Leakage Current (Ir)1uA
number of channels8
Input Current(on)0.1mA
typeMOS
Vce Saturation(VCE(sat))-
Voltage - Forward(Vf)2V
Voltage - Input(Max)30V
Input Current(off)1uA
Current - Collector(Ic)-
Operating Temperature-40℃~+85℃
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2000
Sales UnitPiece

Introduction

AI Translation

TBD62783A series are DMOS transistor array with 8 circuits. It has a clamp diode for switching inductive loads built-in in each output.

Features

AI Translation
  • 8 circuits built-in
  • High voltage : VoUT = 50 V (MAX)
  • High current : |Iour| = -500 mA (MAX for each channel)
  • Input voltage(output on) : 2.0 V (MIN)
  • Input voltage(output off) : 0.6 V (MAX)
  • Package : PG type P-DIP18-300-2.54-001
  • FG type SOP18-P-375-1.27
  • FNG type SSOP18-P-225-0.65
  • FWG type P-SOP18-0812-1.27-001
In-Stock: 9,250
9,250 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.7533$ 0.75
10+$ 0.603$ 6.03
30+$ 0.5278$ 15.83
100+$ 0.4527$ 45.27
500+$ 0.4079$ 203.95
1,000+$ 0.3839$ 383.90
Standard Packaging2000/Full Reel
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