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TOSHIBA GT40QR21(STA1,E,D product image
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TOSHIBA GT40QR21(STA1,E,DRoHS

Manufacturer
TOSHIBA
MPN
GT40QR21(STA1,E,D
LCSC Part #
C4153791
Packaging
TO-3P-3
Customer #
Key Attributes
230W 40A 1.2kV TO-3P-3 Single IGBTs RoHS
Datasheetpdf iconTOSHIBA GT40QR21(STA1,E,D
In-Stock: 90
90 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 3.3351$ 3.34
10+$ 2.8582$ 28.58
25+$ 2.5597$ 63.99
100+$ 2.2531$ 225.31
500+$ 2.1152$ 1057.60
1,000+$ 2.0552$ 2055.20
Standard Packaging25/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/IGBTs/Single IGBTs
ManufacturerTOSHIBA
PackagingTO-3P-3
Td(off)200ns
Pd - Power Dissipation230W
Operating Temperature-
Td(on)120ns
Current - Collector(Ic)40A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)-
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)7.5V
Vce Saturation(VCE(sat))2.7V@40A,15V
Collector Cut-Off Current (Ices)1mA
Reverse Recovery Time(trr)600ns
Switching Energy(Eoff)160uJ
Turn-On Energy (Eon)-
Input Capacitance(Cies)1.5nF
Output Capacitance(Coes)-
Gate Charge(Qg)-
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging25
Sales UnitPiece

Features

AI Translation
  • 6th generation 5 product
  • RC-IGBT consists of a freewheeling diode monolithically integrated in the IGBT chip
  • Enhancement mode
  • High-speed switching: IGBT: fall time tf = 0.20 μs (typ.) (collector current IC = 40 A); fast recovery diode: reverse recovery time trr = 0.60 μs (typ.) (forward current IF = 15 A)
  • Low saturation voltage: collector-emitter saturation voltage VCE(sat) = 1.9V (typ.) (collector current IC = 40A)
  • High junction temperature: junction temperature Tj = 175°C (max.)

Applications

AI Translation

Dedicated to voltage resonant inverter switching applications