LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
Cart
Minos IRFP4468 product image
  • IRFP4468 thumbnail 1
  • IRFP4468 thumbnail 2
  • IRFP4468 thumbnail 3
  • Pinout
  • Footprint
Images for reference only

Minos IRFP4468RoHS

Manufacturer
MinosAsian Brands
MPN
IRFP4468
LCSC Part #
C41433072
Packaging
TO-247
Customer #
Key Attributes
MOSFET N-CH 100V 261A TO-247
Datasheetpdf iconMinos IRFP4468
In-Stock: 216
216 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.2085$ 1.21
10+$ 1.0041$ 10.04
30+$ 0.8646$ 25.94
90+$ 0.7381$ 66.43
510+$ 0.6813$ 347.46
990+$ 0.657$ 650.43
Standard Packaging30/Full Tube
Better price for more quantity?
$

Products Specifications

Show similar products (0) >
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerMinos
PackagingTO-247
Drain to Source Voltage100V
Current - Continuous Drain(Id)261A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation312.5W
Reverse Transfer Capacitance (Crss@Vds)532pF
RDS(on)2.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)11.132nF
Gate Charge(Qg)168nC@10V
TypeN-Channel
Report an ErrorShow similar products (0) >

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging30
Sales UnitPiece

Introduction

AI Translation

N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications

Features

AI Translation
  • VDS = 100V, ID = 261A, RDS(ON) < 2.5mΩ @ VGS = 10V
  • Fast Switching
  • Low On-Resistance
  • Low Gate Charge
  • Low Reverse transfer capacitances
  • High avalanche ruggedness
  • RoHS product

Applications

AI Translation
  • Power Switching application
  • Hard switched and High frequency circuits
  • Uninterruptible power supply