TECH PUBLIC AOD4189
| Manufacturer | TECH PUBLICAsian Brands |
| MPN | AOD4189 |
| LCSC Part # | C41431776 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | MOSFET 40V 40A TO-252 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TECH PUBLIC | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 185pF | |
| Current - Continuous Drain(Id) | 40A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 62W | |
| Reverse Transfer Capacitance (Crss@Vds) | 155pF | |
| RDS(on) | 22mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.87nF | |
| Gate Charge(Qg) | 31.4nC@10V |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This N-channel MOSFET employs advanced SGT technology and design to deliver excellent on-resistance RDS(on) at low gate charge, making it suitable for a wide range of applications.
Features
AI Translation
- Drain-source voltage V<sub>DS</sub> = 40 V, drain current I<sub>D</sub> = 100 A, on-resistance R<sub>DS(ON)</sub> < 3.5 mΩ at V<sub>GS</sub> = 10 V
- Low gate charge
- Green/eco-friendly device options available
- Advanced high cell density trench technology for ultra-low R<sub>DS(ON)</sub>
- Excellent package thermal dissipation performance
Applications
AI Translation
- Reverse Battery protection
- Load switch
- Power management
- PWM Application
In-Stock: 1,890
1,890 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.2271$ 0.2158 | $ 1.08 |
| 50+ | $ 0.1983$ 0.1884 | $ 9.42 |
| 150+ | $ 0.186$ 0.1767 | $ 26.51 |
| 500+ | $ 0.1706$ 0.1621 | $ 81.05 |
| 2,500+ | $ 0.1638$ 0.1557 | $ 389.25 |
| 5,000+ | $ 0.1596$ 0.1517 | $ 758.50 |
Standard Packaging2500/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TECH PUBLIC | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 185pF | |
| Current - Continuous Drain(Id) | 40A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 62W | |
| Reverse Transfer Capacitance (Crss@Vds) | 155pF | |
| RDS(on) | 22mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.87nF | |
| Gate Charge(Qg) | 31.4nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This N-channel MOSFET employs advanced SGT technology and design to deliver excellent on-resistance RDS(on) at low gate charge, making it suitable for a wide range of applications.
Features
AI Translation
- Drain-source voltage V<sub>DS</sub> = 40 V, drain current I<sub>D</sub> = 100 A, on-resistance R<sub>DS(ON)</sub> < 3.5 mΩ at V<sub>GS</sub> = 10 V
- Low gate charge
- Green/eco-friendly device options available
- Advanced high cell density trench technology for ultra-low R<sub>DS(ON)</sub>
- Excellent package thermal dissipation performance
Applications
AI Translation
- Reverse Battery protection
- Load switch
- Power management
- PWM Application
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



