TECH PUBLIC NDS0605
| Manufacturer | TECH PUBLICAsian Brands |
| MPN | NDS0605 |
| LCSC Part # | C41431771 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | 60V 500mA 3V 360mW 1.7Ω@10V 1 P-Channel SOT-23 Single FETs, MOSFETs RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TECH PUBLIC | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 15pF | |
| Current - Continuous Drain(Id) | 500mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 360mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 1.7Ω@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 50pF | |
| Gate Charge(Qg) | 1.3nC@5V |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This N-channel MOSFET utilizes advanced SGT technology and design to achieve excellent on-resistance (RDS(on)) at low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- VDS = 100 V, ID = 25 A, RDS(ON) < 25 mΩ at VGS = 10 V
- Low gate charge
- RoHS-compliant devices available
- Ultra-low RDS(ON) achieved via advanced high cell-density trench technology
- Excellent thermal dissipation in package
Applications
AI Translation
- Line current interrupter for telephone sets
- High-speed and line transformer driver
In-Stock: 175
175 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.0437$ 0.0416 | $ 0.21 |
| 50+ | $ 0.0426$ 0.0405 | $ 2.03 |
| 150+ | $ 0.042$ 0.0399 | $ 5.99 |
| 500+ | $ 0.0413$ 0.0393 | $ 19.65 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TECH PUBLIC | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 15pF | |
| Current - Continuous Drain(Id) | 500mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 360mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 1.7Ω@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 50pF | |
| Gate Charge(Qg) | 1.3nC@5V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This N-channel MOSFET utilizes advanced SGT technology and design to achieve excellent on-resistance (RDS(on)) at low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- VDS = 100 V, ID = 25 A, RDS(ON) < 25 mΩ at VGS = 10 V
- Low gate charge
- RoHS-compliant devices available
- Ultra-low RDS(ON) achieved via advanced high cell-density trench technology
- Excellent thermal dissipation in package
Applications
AI Translation
- Line current interrupter for telephone sets
- High-speed and line transformer driver
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



