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DOINGTER IRFR3518RoHS

Manufacturer
DOINGTERAsian Brands
MPN
IRFR3518
LCSC Part #
C41430586
Packaging
TO-252
Customer #
Key Attributes
MOSFET N-CH 100V 25A TO-252
Datasheetpdf iconDOINGTER IRFR3518
In-Stock: 2,280
2,280 In stock, ships now
Not recommended for new designs
Once stock is depleted, this item will be marked as "Out of Stock."
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QtyUnit PriceTotal Amount
5+$ 0.1262$ 0.63
50+$ 0.0998$ 4.99
150+$ 0.0866$ 12.99
500+$ 0.0767$ 38.35
2,500+$ 0.0687$ 171.75
5,000+$ 0.0648$ 324.00
Standard Packaging2500/Full Reel

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDOINGTER
PackagingTO-252
Drain to Source Voltage100V
Output Capacitance(Coss)371pF
Current - Continuous Drain(Id)25A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation27W
RDS(on)25mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)25pF
Number1 N-channel
Input Capacitance(Ciss)680pF
Gate Charge(Qg)11nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This N-Channel MOSFET uses advanced SGT technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.

Features

AI Translation
  • VDS=100V, ID=25A, RDS(ON)<25mΩ@VGS=10V
  • Low gate charge
  • Green device available
  • Advanced high cell denity trench technology for ultra Iow RDS(ON)
  • Excellent package for good heat dissipation

Applications

AI Translation
  • Motor drivers
  • High-current applications