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HXY MOSFET HC1M15120S
| Manufacturer | HXY MOSFETAsian Brands |
| MPN | HC1M15120S |
| LCSC Part # | C41428811 |
| Packaging | SOT-227 |
| Customer # | |
| Key Attributes | SICFET N-CH 1.2kV 125A SOT-227 |
| Datasheet |  HXY MOSFET HC1M15120S |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | SOT-227 | |
| Configuration | - | |
| Drain to Source Voltage | 1.2kV | |
| Current - Continuous Drain(Id) | 125A | |
| Output Capacitance(Coss) | 214pF | |
| Operating Temperature - | -40℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 681W | |
| RDS(on) | 22mΩ@18V | |
| Reverse Transfer Capacitance (Crss@Vds) | 26pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.508nF | |
| Gate Charge(Qg) | 222nC | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 12 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This product features an optimized package design with separate driver source pins, reducing switching losses and gate ringing to improve system efficiency. It helps reduce thermal management requirements, increase power density, and raise system switching frequency.
Features
AI Translation
- 3rd generation SiC MOSFET technology
- Optimized package with dedicated driver source pin
- High blocking voltage and low on-resistance
- High-speed switching and low capacitance
- Fast intrinsic diode with low reverse recovery charge Qrr
- Halogen-free, RoHS compliant
Applications
AI Translation
- Renewable energy
- Electric vehicle battery chargers
- High-voltage DC/DC converters
- Switch-mode power supplies
In-Stock: 4
4 In stock, ships now
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 58.9824 | $ 58.98 |
| 24+ | $ 56.0173 | $ 1344.42 |
Standard Packaging12/Full Tube | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | SOT-227 | |
| Configuration | - | |
| Drain to Source Voltage | 1.2kV | |
| Current - Continuous Drain(Id) | 125A | |
| Output Capacitance(Coss) | 214pF | |
| Operating Temperature - | -40℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 681W | |
| RDS(on) | 22mΩ@18V | |
| Reverse Transfer Capacitance (Crss@Vds) | 26pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.508nF | |
| Gate Charge(Qg) | 222nC | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 12 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This product features an optimized package design with separate driver source pins, reducing switching losses and gate ringing to improve system efficiency. It helps reduce thermal management requirements, increase power density, and raise system switching frequency.
Features
AI Translation
- 3rd generation SiC MOSFET technology
- Optimized package with dedicated driver source pin
- High blocking voltage and low on-resistance
- High-speed switching and low capacitance
- Fast intrinsic diode with low reverse recovery charge Qrr
- Halogen-free, RoHS compliant
Applications
AI Translation
- Renewable energy
- Electric vehicle battery chargers
- High-voltage DC/DC converters
- Switch-mode power supplies
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | |
| USHTS | |
| TARIC | |
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | |
| USHTS | |
| TARIC |
| Type | Details |
|---|---|
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS | |